Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The interface properties of hydrogenated amorphous carbon films (a-C) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate. © 1989 Springer-Verlag.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Ronald Troutman
Synthetic Metals