Amorphization and conductivity of silicon and germanium induced by indentation

Abstract

We report the observation, by transmission electron microscopy, that single-crystal silicon and germanium are converted to an amorphous state at room temperature directly under both Vickers and Knoop indentations. The effect is seen for crystal orientations of [001], [011], and [111], and with applied loads between 0.1 and 0.5 N. We also observe that the materials become electrically conducting under load and that the process is reversible on subsequent unloading and reloading. Furthermore, the transformed phase is found to make Ohmic contact to the surrounding, untransformed, semiconductor. © 1988 The American Physical Society.