William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed. © Copyright 2006 by International Business Machines Corporation.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Sabine Deligne, Ellen Eide, et al.
INTERSPEECH - Eurospeech 2001
Thomas M. Cover
IEEE Trans. Inf. Theory
M.F. Cowlishaw
IBM Systems Journal