Acoustic-mode scattering mobility of holes in diamond type semiconductors

Abstract

The mobility of holes scattered by acoustic phonons in a diamond-type semiconductor, and specifically in germanium, has been calculated using matrix elements calculated, in a previous paper, as a function of the three applicable deformation potentials. The matrix elements, and hence the scattering times and the mean free paths, were represented by expansions in Kubic Harmonics. No "spherical symmetry" approximations were made and the calculation provides a critique, on the basis of the rate of convergence of the expansions, of such approximations. The experimental values a = 2.0 eV, b = -2.1 eV, d = -7.0 eV were used for the deformation potentials in germanium and the acoustic-mode drift mobility was calculated to be 3.13 × 104 cm2 volt sec at 100°K. The available experimental value is 3.38 × 104. © 1964.