O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
A ZnS ac thin film electroluminescence device can exhibit a brightness vs. voltage hysteresis loop or "memory effect". We show that this "memory effect" is associated with the filamentary nature of the dissipative current. The filaments show a bistability in their conductive state, i.e., the nature of the "ac negative resistance" involved is current controlled. Experimental results on single filament switching under voltage, pulse width and light address are presented. © 1979.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
E. Burstein
Ferroelectrics
Revanth Kodoru, Atanu Saha, et al.
arXiv
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993