I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained. © 1973 The American Physical Society.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
R.W. Gammon, E. Courtens, et al.
Physical Review B
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993