R.C. Cammarata, C.V. Thompson, et al.
Applied Physics Letters
Zone-melt recrystallization (ZMR) of polycrystalline silicon-on-insulator films has been used to produce a variety of tilt grain boundaries for electrical characterization. Electron channeling patterns reveal the grains to have misorientations up to ∼25°and the parallel boundaries to be separated by distances of up to ∼1 mm. Current-voltage measurements indicate that the boundaries are electrically inactive, with no evidence of defect gap states even after long high-temperature anneals.
R.C. Cammarata, C.V. Thompson, et al.
Applied Physics Letters
R.V. Joshi, D.A. Smith, et al.
Thin Solid Films
A. Cros, K.N. Tu, et al.
Applied Physics Letters
J.M.E. Harper, D.A. Smith, et al.
MRS Symposium 1985