A sub-600mV, fluctuation tolerant 65nm CMOS SRAM array with dynamic cell biasing

Abstract

Combinations of circuit techniques enabling tolerance to VT fluctuations in SRAM cell transistors during Read or Write operations and significant reductions in minimum operating voltage are reported. Implemented in a 9Kb × 74b PDSOI CMOS SRAM array with a conventional 65nm SRAM cell and an ABIST, these techniques, demonstrate VMIN of 0.58V and 0.40V/0.54V for single and dual VDD implementations respectively. The techniques consume a 10-12% overhead in area, improve performance marginally and also enable over 50% reduction in cell leakage with minimal circuit overhead.