O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
A. Gangulee, F.M. D'Heurle
Thin Solid Films
R. Ghez, J.S. Lew
Journal of Crystal Growth