P.C. Pattnaik, D.M. Newns
Physical Review B
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
P.C. Pattnaik, D.M. Newns
Physical Review B
J.C. Marinace
JES
David B. Mitzi
Journal of Materials Chemistry
Revanth Kodoru, Atanu Saha, et al.
arXiv