A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects

Abstract

A non-iterative compact model for CNFET is described. We show that source exhaustion is an important characteristic in devices operating under ballistic transport, which sets a fundamental limit for device current. Source engineering to supply enough carriers for high current will be very important. The utility of this compact model has been demonstrated by using it in a system-level optimization program that determines optimal device design parameters within a given system design constraint (e.g power). Our optimization results show that CNFETs have great potential for very advanced technology nodes. © 2009 IEEE.