A new route to ultra-high density memory using the Micro to Nano Addressing Block (MNAB)

For the first time, we demonstrate sublithographic memory read/write operation using Micro to Nano Addressing Block (MNAB) decoders. Test structures are fabricated with integrated one-time programmable oxide ROM elements addressed using MNAB devices that have 4 sub-50 nm silicon fins at 140 nm period. Functional operation is obtained for all 4-bit ROM sequences and over different ROM cell areas. © 2006 IEEE.