Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A procedure for the vapor deposition of a thick layer of silicon oxide was developed to confine thin polymer films between two rigid flat walls. For silicon oxide overlayers thicker than ∼ 1.5 μm the deposited silicon oxide layer is mechanically stable against heating above the glass transition temperature of the polymer. Neutron reflectivity measurements show that the interface between the polymer and the deposited silicon oxide is sharp, having a characteristic width of 1.5 nm. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Julien Autebert, Aditya Kashyap, et al.
Langmuir
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics