F.E. Allen, G. Almasi, et al.
IBM Systems Journal
Here we propose and analyze the behavior of a field effect transistor (FET)-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low "ON" impedance and high "OFF" impedance. Function of the device is feasible don to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. © 1997 American Institute of Physics.
F.E. Allen, G. Almasi, et al.
IBM Systems Journal
D.M. Newns, P.C. Pattnaik, et al.
Physica C: Superconductivity and its Applications
G. Almasi, C. Caşcaval, et al.
ICS 2001
D.M. Newns, C.C. Tsuei, et al.
Physical Review B