Jonghae Kim, Jean-Olivier Plouchart, et al.
ISLPED 2003
Demonstrating a >10X density increase over traditional VLSI fuse circuits, a compact eFUSE programmable array memory configured as a 4Kb one-time programmable ROM (OTPROM) is presented using a 6.2μm2 NiSi x silicide electromigration 1T1R cell in 65nm SOI CMOS. A 20μs programming time at 1.5 V is achieved by asymmetrical scaling of the fuse and a shared differential sensing scheme. Having zero process cost adder, eFUSE is fully compatible with standard VLSI manufacturing.
Jonghae Kim, Jean-Olivier Plouchart, et al.
ISLPED 2003
Christopher Berry, David Wolpert, et al.
IBM J. Res. Dev
Peter J. Klim, John Barth, et al.
IEEE Journal of Solid-State Circuits
Peter Klim, John Barth, et al.
VLSI Circuits 2008