A back-end-of-line compatible, ferroelectric analog non-volatile memory

Abstract

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (∼375°C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neuralnetwotk inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.