Conference paper
Carrier leakage in 1.3 μm SCH quantum well lasers
S. Hausser, C. Harder, et al.
ISLC 1992
Paper
5.2-GHz Bandwidth Monolithic GaAs Optoelectronic Receiver
Abstract
A high-speed monolithic optoelectronic receiver consisting of a photodetector, a transimpedance amplifier, and a 50-Ω output buffer stage has been fabricated using an enhancement/depletion 0.35-μm recessed-gate GaAs MESFET process. The interdigitated metal-semiconductor-metal (MSM) photodetector has a dark current of 0.8 nA, a responsivity of 0.2 A/W, and a capacitance of 12 fF. The bandwidth of the receiver is 5.2 GHz with an effective transimpedance of 300 Ω into a 50-0 load, which corresponds to a transimpedance bandwidth product of 1.5 THz-Ω. © 1988 IEEE.
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