Ullrich R. Pfeiffer, David Goren, et al.
ESSCIRC 2005
Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk. SOI. and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and Fmin's of 4.5 (bulk) and 3.5 dB (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and Fmin's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible Io implement 20-GHz tuned amplifiers in a fully scaled 0.1-μn CMOS process.
Ullrich R. Pfeiffer, David Goren, et al.
ESSCIRC 2005
K.O. Kenneth, Kihong Kim, et al.
IEEE Transactions on Electron Devices
Brian A. Floyd, Xiaoling Guo, et al.
TAU 2002
Brian A. Floyd
RFIC 2007