248 nm laser etching of GaAs in chlorine and ozone gas environments

Abstract

KrF laser etching of GaAs in Cl2 and O3 gas ambients by direct laser illumination is reported. The etch depth per pulse in Cl2 was found to be linear versus the laser fluence on the sample in the 0.2-1.1 J/cm2 range. It increased as a function of the Cl2 pressure up to 6 Torr and slightly decreased for pressures above this value. It also decreased as a function of the laser repetition rate. Very smoothly etched surfaces were obtained after irradiation using the Cl2 and O3 etching gases. Auger analysis of the etched GaAs surfaces shows almost no traces of chlorine after etching in Cl2, whereas a thick oxide layer of about 1500 Å thickness was found after etching in ozone. © 1988 Springer-Verlag.