Maciel Zortea, Miguel Paredes, et al.
IGARSS 2021
We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the injection of carriers at the electrode/nanotube interface, while at the same time excess noise is related to the number of carriers inside the nanotube channel. In addition, we demonstrate a substantial reduction in noise amplitude for a tube transistor with multiple carbon nanotubes in parallel. © 2007 IEEE.
Maciel Zortea, Miguel Paredes, et al.
IGARSS 2021
M.J. Slattery, Joan L. Mitchell
IBM J. Res. Dev
Fan Zhang, Junwei Cao, et al.
IEEE TETC
S. Sattanathan, N.C. Narendra, et al.
CONTEXT 2005